Discrete Semiconductor Products

FQP630TSTU

Obsolete

ON Semiconductor

MOSFET N-CH 200V 9A TO220-3

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Discrete Semiconductor Products

FQP630TSTU

Obsolete

ON Semiconductor

MOSFET N-CH 200V 9A TO220-3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQP630TSTU

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQP6N80C Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, 800 V, 5.5 A, 2.5 Ω, TO-220

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FQP630	TO-220-3	550 pF	25 V	9 A	25 nC	MOSFET (Metal Oxide)	400 mOhm	N-Channel	Through Hole	10 V	200 V	-55 °C	150 °C	78 W	4 V	TO-220-3
ON Semiconductor FQP630TSTU	TO-220-3	550 pF	25 V	9 A	25 nC	MOSFET (Metal Oxide)	400 mOhm	N-Channel	Through Hole	10 V	200 V	-55 °C	150 °C	78 W	4 V	TO-220-3
ON Semiconductor FQP6N40C	TO-220-3	625 pF	30 V	6 A		MOSFET (Metal Oxide)		N-Channel	Through Hole	10 V	400 V	-55 °C	150 °C		4 V	TO-220-3	1 Ohm	20 nC	73 W
ON Semiconductor FQP6N80C	TO-220-3		30 V	5.5 A		MOSFET (Metal Oxide)	2.5 Ohm	N-Channel	Through Hole	10 V	800 V	-55 °C	150 °C	158 W	5 V	TO-220-3				30 nC	1310 pF
ON Semiconductor FQP6N40C	TO-220-3	625 pF	30 V	6 A		MOSFET (Metal Oxide)		N-Channel	Through Hole	10 V	400 V	-55 °C	150 °C		4 V	TO-220-3	1 Ohm	20 nC	73 W
ON Semiconductor FQP6N15	TO-220-3	270 pF	25 V	6.4 A	8.5 nC	MOSFET (Metal Oxide)	600 mOhm	N-Channel	Through Hole	10 V	150 V	-55 °C	175 ░C	63 W	4 V	TO-220-3
ON Semiconductor FQP6N50	TO-220-3	790 pF	30 V	5.5 A	22 nC	MOSFET (Metal Oxide)	1.3 Ohm	N-Channel	Through Hole	10 V	500 V	-55 °C	150 °C		5 V	TO-220-3			98 W
ON Semiconductor FQP6P25	TO-220-3	780 pF	30 V	6 A	27 nC	MOSFET (Metal Oxide)	1.1 Ohm	P-Channel	Through Hole	10 V	250 V	-55 °C	150 °C	90 W	5 V	TO-220-3
ON Semiconductor FQP6P25	TO-220-3	780 pF	30 V	6 A	27 nC	MOSFET (Metal Oxide)	1.1 Ohm	P-Channel	Through Hole	10 V	250 V	-55 °C	150 °C	90 W	5 V	TO-220-3
ON Semiconductor FQP6N90	TO-220-3		30 V	5.8 A		MOSFET (Metal Oxide)	1.9 Ohm	N-Channel	Through Hole	10 V	900 V	-55 °C	150 °C	167 W	5 V	TO-220-3				52 nC	1880 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQP6N80C Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Documents

Technical documentation and resources