Discrete Semiconductor Products

BD139-10-BP

Obsolete

TRANS NPN 80V 1.5A TO126

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 80V 1.5A TO126

Technical Specifications

Parameters and characteristics for this part

Specification	BD139-10-BP

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.25 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Transistor Type
Micro Commercial Components BD139-10-BP	80 V	63 hFE	1.25 W	-55 °C	150 °C	500 mV	Through Hole	100 nA	TO-126	1.5 A	TO-126-3 TO-225AA	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126

Technical documentation and resources