Discrete Semiconductor Products

KFJ4B01120L

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MOSFET P-CH 12V

Discrete Semiconductor Products

Active

MOSFET P-CH 12V

Technical Specifications

Parameters and characteristics for this part

Specification	KFJ4B01120L

Current - Continuous Drain (Id) (Ta)	2.6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	10.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	814 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package / Case	4-XFLGA, CSP
Package Length	1 mm
Package Name	4-CSP
Package Width	1 mm
Power Dissipation (Max)	370 mW
Qualification	AEC-Q101
Rds On (Max)	51 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Drain to Source Voltage (Vdss)	Qualification	Rds On (Max)	Technology	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Vgs(th) (Max)	Package Name	Package Length	Package Width	Input Capacitance (Ciss) (Max)	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Grade
Nuvoton Technology Corporation KFJ4B01120L	12 V	AEC-Q101	51 mOhm	MOSFET (Metal Oxide)	370 mW	8 V	Surface Mount	1 V	4-CSP	1 mm	1 mm	814 pF	4-XFLGA CSP	85 °C	-40 °C	P-Channel	4.5 V	1.5 V	10.7 nC	2.6 A	Automotive
Nuvoton Technology Corporation KFJ4B01110L

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

P-Channel 12 V 2.6A (Ta) 370mW (Ta) Surface Mount 4-CSP (1x1)

Technical documentation and resources