
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | KSH31TF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 hFE |
| Frequency - Transition | 3 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 1.56 W |
| Supplier Device Package | DPAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
KSH31C Series
NPN Epitaxial Silicon Transistor
Documents
Technical documentation and resources