Discrete Semiconductor Products

CDH333 TR

Obsolete

DIODE GEN PURP 125V 200MA DO35

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 125V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	CDH333 TR

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	3 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AH, Axial, DO-35
Reverse Recovery Time (trr)	3 çs
Speed	200 mA
Speed	Any Speed
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	125 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.15 V

Part	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed
Central Semiconductor Corp CDH333 TR	200 mA	Through Hole	3 nA	Standard	1.15 V	3 çs	200 C	-65 C	Axial DO-204AH DO-35	DO-35	125 V	200 mA	Any Speed
Central Semiconductor Corp CDH333 BK	200 mA	Through Hole	3 nA	Standard	1.15 V	3 çs	200 C	-65 C	Axial DO-204AH DO-35	DO-35	125 V	200 mA	Any Speed

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 125 V 200mA Through Hole DO-35

Technical documentation and resources