Discrete Semiconductor Products

CDBD2SC21200-G

Obsolete

DIODE SIL CARB 1.2KV 6.2A TO263

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 6.2A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	CDBD2SC21200-G

Capacitance @ Vr, F	136 pF
Current - Average Rectified (Io)	6.2 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-263 (D2PAK)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Current - Average Rectified (Io)	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Comchip Technology CDBD2SC21200-G	6.2 A	136 pF	0 ns	1.7 V	Surface Mount	175 ░C	-55 C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 µA	No Recovery Time	SiC (Silicon Carbide) Schottky	1.2 kV	TO-263 (D2PAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 6.2A Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available