Discrete Semiconductor Products

CDBD2SC21200-G

Obsolete

DIODE SIL CARB 1.2KV 6.2A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 6.2A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	CDBD2SC21200-G

Capacitance @ Vr, F	136 pF
Current - Average Rectified (Io)	6.2 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263 (D2PAK)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Supplier Device Package	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
Comchip Technology CDBD2SC21200-G	136 pF	6.2 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.2 kV	Surface Mount	500 mA	TO-263 (D2PAK)	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	0 ns	1.7 V	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 6.2A Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available