Discrete Semiconductor Products

SI7501DN-T1-E3

Obsolete

MOSFET N/P-CH 30V 5.4A 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 5.4A 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7501DN-T1-E3

Configuration	Common Drain, N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A, 5.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	14 nC
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Power - Max [Max]	1.6 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	FET Feature	Mounting Type	Vgs(th) (Max) @ Id	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Package / Case	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI7501DN-T1-E3	35 mOhm	Logic Level Gate	Surface Mount	3 V	1.6 W	14 nC	Common Drain N and P-Channel	PowerPAK® 1212-8 Dual	30 V	MOSFET (Metal Oxide)	4.5 A 5.4 A	PowerPAK® 1212-8 Dual
Vishay General Semiconductor - Diodes Division SI7501DN-T1-GE3	35 mOhm	Logic Level Gate	Surface Mount	3 V	1.6 W	14 nC	Common Drain N and P-Channel	PowerPAK® 1212-8 Dual	30 V	MOSFET (Metal Oxide)	4.5 A 5.4 A	PowerPAK® 1212-8 Dual

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 5.4A, 4.5A 1.6W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources

No documents available