Discrete Semiconductor Products

PMH850UPEH

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MOSFET P-CH 30V 600MA DFN0606-3

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Discrete Semiconductor Products

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MOSFET P-CH 30V 600MA DFN0606-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMH850UPEH

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds	62.2 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	660 mW, 2.23 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	DFN0606-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PMH850UPEH	DFN0606-3	3-XFDFN	-55 °C	150 °C	1 Ohm	30 V	62.2 pF	P-Channel	950 mV	8 V	MOSFET (Metal Oxide)	2.23 W 660 mW	0.9 nC	1.5 V 4.5 V	Surface Mount	600 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 600mA (Ta) 660mW (Ta), 2.23W (Tc) Surface Mount DFN0606-3

Technical documentation and resources