
Integrated Circuits (ICs)
DG636EQ-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
IC SWITCH SPDTX2 115OHM 14TSSOP
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Integrated Circuits (ICs)
DG636EQ-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
IC SWITCH SPDTX2 115OHM 14TSSOP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DG636EQ-T1-E3 |
|---|---|
| -3db Bandwidth | 610 MHz |
| Channel Capacitance (CS(off), CD(off)) [custom] | 2.1 pF |
| Channel Capacitance (CS(off), CD(off)) [custom] | 4.2 pF |
| Channel-to-Channel Matching (ΔRon) | 1 Ohm |
| Charge Injection | 0.1 pC |
| Crosstalk | -88 dB |
| Current - Leakage (IS(off)) (Max) | 100 pA |
| Mounting Type | Surface Mount |
| Multiplexer/Demultiplexer Circuit | 2:1 |
| Number of Circuits | 2 |
| On-State Resistance (Max) [Max] | 115 Ohm |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 14-TSSOP |
| Package / Case [custom] | 0.173 " |
| Package / Case [custom] | 4.4 mm |
| Supplier Device Package | 14-TSSOP |
| Switch Circuit | SPDT |
| Switch Time (Ton, Toff) (Max) [custom] | 60 ns |
| Switch Time (Ton, Toff) (Max) [custom] | 52 ns |
| Voltage - Supply, Dual (V±) [Max] | 5 V |
| Voltage - Supply, Dual (V±) [Min] | -2.7 V |
| Voltage - Supply, Single (V+) [Max] | 12 V |
| Voltage - Supply, Single (V+) [Min] | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DG636 Series
2 Circuit IC Switch 2:1 115Ohm 14-TSSOP
Documents
Technical documentation and resources
No documents available