Discrete Semiconductor Products

BAS33-TAP

LTB

DIODE GEN PURP 30V 200MA DO35

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Discrete Semiconductor Products

LTB

DIODE GEN PURP 30V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAS33-TAP

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	1 nA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Qualification	AEC-Q101
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-204AH (DO-35)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Grade	Supplier Device Package	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Technology	Qualification	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case
Vishay General Semiconductor - Diodes Division BAS33-TAP	Automotive	DO-204AH (DO-35)	3 pF	175 °C	200 mA	Standard	AEC-Q101	Any Speed	200 mA	1 V	30 V	Through Hole	1 nA	Axial DO-204AH DO-35

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 200mA Through Hole DO-204AH (DO-35)

Technical documentation and resources

No documents available