Discrete Semiconductor Products

PHKD6N02LT,518

Obsolete

MOSFET 2N-CH 20V 10.9A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 10.9A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	PHKD6N02LT,518

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	10.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	15.3 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	4.17 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	FET Feature	Technology	Drain to Source Voltage (Vdss)	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case	Package / Case
Nexperia USA Inc. PHKD6N02LT,518	Surface Mount	10.9 A	150 °C	-55 °C	2 N-Channel (Dual)	950 pF	20 mOhm	1.5 V	8-SO	Logic Level Gate	MOSFET (Metal Oxide)	20 V	4.17 W	15.3 nC	0.154 in	8-SOIC	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 10.9A 4.17W Surface Mount 8-SO

Technical documentation and resources