Discrete Semiconductor Products

SIR403EDP-T1-GE3

Active

MOSFET P-CH 30V 40A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 30V 40A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR403EDP-T1-GE3

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	153 nC
Input Capacitance (Ciss) (Max) @ Vds	4620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	56.8 W, 5 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.8 V

Part	FET Type	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIR403EDP-T1-GE3	P-Channel	25 V	5 W 56.8 W	2.8 V	153 nC	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	6.5 mOhm	4.5 V 10 V	4620 pF	PowerPAK® SO-8	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 40A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources