Discrete Semiconductor Products

BMS4007

Obsolete

MOSFET N-CH 75V 60A TO220ML

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 75V 60A TO220ML

Technical Specifications

Parameters and characteristics for this part

Specification	BMS4007

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	30 W, 2 W
Rds On (Max) @ Id, Vgs	7.8 mOhm
Supplier Device Package	TO-220ML
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drain to Source Voltage (Vdss)
ON Semiconductor BMS4007	10 V	Through Hole	2 W 30 W	MOSFET (Metal Oxide)	TO-220-3 Full Pack	60 A	TO-220ML	20 V	7.8 mOhm	-55 °C	150 °C	160 nC	9700 pF	N-Channel	75 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 75 V 60A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220ML

Technical documentation and resources