Discrete Semiconductor Products

SQ1922AEEH-T1_GE3

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MOSFET 2N-CH 20V 0.85A SC70-6

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Discrete Semiconductor Products

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MOSFET 2N-CH 20V 0.85A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SQ1922AEEH-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	850 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	1.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Grade	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Power - Max	Vgs(th) (Max) @ Id	Qualification	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SQ1922AEEH-T1_GE3	Automotive	300 mOhm	-55 °C	175 ░C	6-TSSOP SC-88 SOT-363	SC-70-6	60 pF	Surface Mount	850 mA	20 V	MOSFET (Metal Oxide)	1.5 W	2.5 V	AEC-Q101	2 N-Channel (Dual)	1.2 nC
Vishay General Semiconductor - Diodes Division SQ1922EEH-T1_GE3	Automotive		-55 °C	175 ░C	6-TSSOP SC-88 SOT-363	SC-70-6		Surface Mount	840 mA	20 V	MOSFET (Metal Oxide)		1.5 V	AEC-Q101	2 N-Channel (Dual)	1.2 nC	1.5 W	350 mOhm	50 pF

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General part information

Mosfet Array 20V 850mA (Tc) 1.5W (Tc) Surface Mount SC-70-6

Technical documentation and resources