Discrete Semiconductor Products

SIL08N03-TP

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MOSFET N-CH 30V 8A SOT23-6L

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 8A SOT23-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIL08N03-TP

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Micro Commercial Components SIL08N03-TP	20 V	30 V	-55 °C	150 °C	SOT-23-6L	8 A	SOT-23-6	13 nC	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	14 mOhm	Surface Mount	3 V	900 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 8A (Tc) 1.6W Surface Mount SOT-23-6L

Technical documentation and resources