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onsemi-MSD602-RT1G GP BJT Trans GP BJT NPN 50V 0.5A 200mW 3-Pin SC-59 T/R
Discrete Semiconductor Products

MUN2236T1G

Obsolete
ON Semiconductor

TRANS DIGITAL BJT NPN 50V 100MA 338MW 3-PIN SC-59 T/R

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onsemi-MSD602-RT1G GP BJT Trans GP BJT NPN 50V 0.5A 200mW 3-Pin SC-59 T/R
Discrete Semiconductor Products

MUN2236T1G

Obsolete
ON Semiconductor

TRANS DIGITAL BJT NPN 50V 100MA 338MW 3-PIN SC-59 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMUN2236T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]338 mW
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms
Resistors IncludedR1 and R2
Supplier Device PackageSC-59
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MUN2236 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.