Discrete Semiconductor Products

BUK7Y15-60EX

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BUK7Y15-60E - N-CHANNEL 60 V, 15 MΩ STANDARD LEVEL MOSFET IN LFPAK56 SOIC 4-PIN

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Discrete Semiconductor Products

Active

BUK7Y15-60E - N-CHANNEL 60 V, 15 MΩ STANDARD LEVEL MOSFET IN LFPAK56 SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y15-60EX

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1838 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	94 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Grade	Supplier Device Package	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP BUK7Y15-60EX	N-Channel	1838 pF	AEC-Q101	10 V	SC-100 SOT-669	15 mOhm	Automotive	LFPAK56 Power-SO8	20 V	Surface Mount	24.5 nC	53 A	94 W	-55 °C	175 ░C	MOSFET (Metal Oxide)	60 V

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General part information

N-Channel 60 V 53A (Tc) 94W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources