Specification	SSM3J374R,LXHF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	71 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

SSM3J374R Series

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Operating Temperature	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Qualification	Grade
Toshiba Semiconductor and Storage SSM3J374R,LF	SOT-23-3 Flat Leads	4 A	5.9 nC	1 W	MOSFET (Metal Oxide)	150 °C	Surface Mount	30 V	2 V	280 pF	SOT-23F	P-Channel	10 V	-20 V	71 mOhm	4 V	10 V
Toshiba Semiconductor and Storage SSM3J374R,LXHF	SOT-23-3 Flat Leads	4 A	5.9 nC	1 W	MOSFET (Metal Oxide)	150 °C	Surface Mount	30 V	2 V	280 pF	SOT-23F	P-Channel	10 V	-20 V	71 mOhm	4 V	10 V	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7744	$ 0.50

General part information

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, -4.0 A, 0.071 Ω@10V, SOT-23F

Technical documentation and resources