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BSS192PH6327FTSA1
Discrete Semiconductor Products

BSS192PH6327FTSA1

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INFINEON

P-CHANNEL SMALL SIGNAL MOSFET 250 V ; SOT-89 PACKAGE; 1,2 OHM

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BSS192PH6327FTSA1
Discrete Semiconductor Products

BSS192PH6327FTSA1

Active
INFINEON

P-CHANNEL SMALL SIGNAL MOSFET 250 V ; SOT-89 PACKAGE; 1,2 OHM

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS192PH6327FTSA1
Current - Continuous Drain (Id) @ 25°C190 mA
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 2.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]6.1 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]104 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-243AA
Power Dissipation (Max)1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs12 Ohm
Supplier Device PackagePG-SOT89
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1932$ 0.74
MouserN/A 1$ 0.60
10$ 0.40
100$ 0.27
500$ 0.24
1000$ 0.20
2000$ 0.17
10000$ 0.16
25000$ 0.15
50000$ 0.15

Description

General part information

BSS192 Series

Infineon technologies offers automotive and industrial manufacturers a broad portfolio ofN and P-Channel Small Signal MOSFETsthat meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety ofapplicationsincludingLED lighting,ADAS,body control units,SMPSandmotor control.