Discrete Semiconductor Products

SI7119DN-T1-GE3

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TRANS MOSFET P-CH 200V 1.2A 8-PIN POWERPAK 1212-8 T/R

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Discrete Semiconductor Products

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TRANS MOSFET P-CH 200V 1.2A 8-PIN POWERPAK 1212-8 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SI7119DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	666 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	1.05 Ohm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI7119DN-T1-GE3	PowerPAK® 1212-8	P-Channel	PowerPAK® 1212-8	666 pF	1.05 Ohm	Surface Mount	150 °C	-50 °C	3.8 A	MOSFET (Metal Oxide)	200 V	6 V 10 V	20 V	4 V	25 nC	3.7 W 52 W
Vishay General Semiconductor - Diodes Division SI7119DN-T1-E3	PowerPAK® 1212-8	P-Channel	PowerPAK® 1212-8	666 pF	1.05 Ohm	Surface Mount	150 °C	-50 °C	3.8 A	MOSFET (Metal Oxide)	200 V	6 V 10 V	20 V	4 V	25 nC	3.7 W 52 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 200 V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources