Discrete Semiconductor Products
WNSC2D0512006Q
ActiveWeEn Semiconductors
DIODE SIL CARB 1200V 5A TO220AC
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Discrete Semiconductor Products
WNSC2D0512006Q
ActiveWeEn Semiconductors
DIODE SIL CARB 1200V 5A TO220AC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | WNSC2D0512006Q |
|---|---|
| Capacitance @ Vr, F | 260 pF |
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage @ Vr | 25 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 5 A |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.76 | |
Description
General part information
WNSC2D0512006Q
DIODE SIL CARB 1200V 5A TO220AC
Documents
Technical documentation and resources
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