Discrete Semiconductor Products

BSS8402DW-TP

Active

MOSFET N/P-CH 60V/50V SOT363

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N/P-CH 60V/50V SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BSS8402DW-TP

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	130 mA, 115 mA
Drain to Source Voltage (Vdss)	60 V, 50 V
Input Capacitance (Ciss) (Max) @ Vds	50 pF, 30 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Rds On (Max) @ Id, Vgs	10 Ohm, 2 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V, 2 V

Part	Power - Max [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Technology	Configuration	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
MCC (Micro Commercial Components) BSS8402DW-TP	200 mW	6-TSSOP SC-88 SOT-363	Surface Mount	50 V 60 V	115 mA 130 mA	150 °C	-55 °C	2 V 2.5 V	MOSFET (Metal Oxide)	N and P-Channel	2 Ohm 10 Ohm	30 pF 50 pF	SOT-363
MCC (Micro Commercial Components) BSS8402DW-TP	200 mW	6-TSSOP SC-88 SOT-363	Surface Mount	50 V 60 V	115 mA 130 mA	150 °C	-55 °C	2 V 2.5 V	MOSFET (Metal Oxide)	N and P-Channel	2 Ohm 10 Ohm	30 pF 50 pF	SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V, 50V 115mA, 130mA 200mW Surface Mount SOT-363

Technical documentation and resources