Discrete Semiconductor Products

IKZ75N65NH5XKSA1

Obsolete

IGBT TRENCH 650V 90A TO247-4

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Discrete Semiconductor Products

Obsolete

IGBT TRENCH 650V 90A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	IKZ75N65NH5XKSA1

Current - Collector (Ic) (Max) [Max]	90 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	166 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-4
Power - Max [Max]	395 W
Reverse Recovery Time (trr)	59 ns
Supplier Device Package	PG-TO247-4
Switching Energy	520 µJ, 880 µJ
Td (on/off) @ 25°C	52 ns, 412 ns
Test Condition	400 V, 15 V, 37.5 A, 27 Ohm
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Switching Energy	Mounting Type	Reverse Recovery Time (trr)	Gate Charge	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Td (on/off) @ 25°C	Supplier Device Package	Test Condition	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type
INFINEON IKZ75N65NH5XKSA1	520 µJ 880 µJ	Through Hole	59 ns	166 nC	300 A	2.1 V	395 W	175 °C	-40 °C	TO-247-4	52 ns 412 ns	PG-TO247-4	15 V 27 Ohm 37.5 A 400 V	90 A	650 V	Trench

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT Trench 650 V 90 A 395 W Through Hole PG-TO247-4

Technical documentation and resources