PSMNR55-40SSHJ
ActiveN-CHANNEL 40 V, 0.55 MOHM, 500 AMPS CONTINUOUS, STANDARD LEVEL MOSFET IN LFPAK88 USING NEXTPOWERS3 TECHNOLOGY
Deep-Dive with AI
Search across all available documentation for this part.
PSMNR55-40SSHJ
ActiveN-CHANNEL 40 V, 0.55 MOHM, 500 AMPS CONTINUOUS, STANDARD LEVEL MOSFET IN LFPAK88 USING NEXTPOWERS3 TECHNOLOGY
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMNR55-40SSHJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 500 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 267 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 21162 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1235 |
| Power Dissipation (Max) | 375 W |
| Rds On (Max) @ Id, Vgs | 0.55 mOhm |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PSMNR55-40SSH Series
500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.
Documents
Technical documentation and resources