Beta

⌘K

Product thumbnail image

Discrete Semiconductor Products

SCS208AJHRTLL

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 13 NC, TO-263AB

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsMethod for Monitoring Switching Waveform How to Use the Thermal Resistance and Thermal Characteristics Parameters +49

Product thumbnail image

Discrete Semiconductor Products

SCS208AJHRTLL

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 13 NC, TO-263AB

Deep-Dive with AI

DocumentsMethod for Monitoring Switching Waveform How to Use the Thermal Resistance and Thermal Characteristics Parameters +49

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCS208AJHRTLL

Capacitance @ Vr, F	291 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	160 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263AB
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.55
		10	$ 5.50
		100	$ 4.45
		500	$ 3.96
	Digi-Reel®	1	$ 6.55
		10	$ 5.50
		100	$ 4.45
		500	$ 3.96
	N/A	0	$ 7.34
	Tape & Reel (TR)	1000	$ 3.06
Newark	Each	1	$ 6.53
		10	$ 4.53
		25	$ 4.18
		50	$ 3.83
		100	$ 3.47
		250	$ 3.33
		500	$ 3.18

Description

General part information

SCS208 Series

Switching loss reduced, enabling high-speed switching. (Surface mount package)

Documents

Technical documentation and resources

Method for Monitoring Switching Waveform

Schematic Design & Verification

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Taping Information

Package Information

Two-Resistor Model for Thermal Simulation

Inner Structure

Package Information

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Compliance of the ELV directive

Environmental Data

Part Explanation

Application Note

Notes for Calculating Power Consumption:Static Operation

SCS208AJHR Data Sheet

4 Steps for Successful Thermal Designing of Power Devices

θ<sub>JC</sub> and Ψ<sub>JT</sub>

How to Use Thermal Models

ESD Data

Characteristics Data

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Anti-Whisker formation

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

About Flammability of Materials

Environmental Data

What Is Thermal Design

Moisture Sensitivity Level

Package Information

What is a Thermal Model? (SiC Power Device)

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

Precautions for Thermal Resistance of Insulation Sheet

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

PCB Layout Thermal Design Guide

Package Dimensions

Package Information

Judgment Criteria of Thermal Evaluation

Precautions When Measuring the Rear of the Package with a Thermocouple

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

How to Use LTspice® Models

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

How to Create Symbols for PSpice Models

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

Measurement Method and Usage of Thermal Resistance RthJC

Reliability Test Result

Manufacturing Data

Basics of Thermal Resistance and Heat Dissipation

Explanation for Marking

Package Information

Notes for Temperature Measurement Using Thermocouples

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

Condition of Soldering

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Constitution Materials List

Environmental Data

About Export Administration Regulations (EAR)

Export Information

Diode Types and Applications

Technical Article

AEC-Q101 Automotive Requirements

Related Document

SCS208 Series

650V, 8A, SMD, Silicon-carbide (SiC) SBD for Automotive

Part	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Grade	Qualification
Rohm Semiconductor SCS208AGC	175 ░C	0 ns	291 pF	500 mA	160 µA	TO-220AC	SiC (Silicon Carbide) Schottky	Through Hole	650 V	8 A	TO-220-2
Rohm Semiconductor SCS208AJTLL	175 ░C	0 ns	291 pF	500 mA	160 µA	TO-263AB	SiC (Silicon Carbide) Schottky	Surface Mount	650 V	8 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Rohm Semiconductor SCS208AGHRC	175 ░C	0 ns	291 pF	500 mA	160 µA	TO-220AC	SiC (Silicon Carbide) Schottky	Through Hole	650 V	8 A	TO-220-2	Automotive	AEC-Q101
Rohm Semiconductor SCS208AMC	175 ░C	0 ns	291 pF	500 mA	160 µA	TO-220FM	SiC (Silicon Carbide) Schottky	Through Hole	650 V	8 A	TO-220-2 Full Pack
Rohm Semiconductor SCS208AJHRTLL	175 ░C	0 ns	291 pF	500 mA	160 µA	TO-263AB	SiC (Silicon Carbide) Schottky	Surface Mount	650 V	8 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	AEC-Q101