Discrete Semiconductor Products

VBO130-16NO7

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BIPOLAR MODULE - DIODE PWS-E/ BOX

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Discrete Semiconductor Products

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BIPOLAR MODULE - DIODE PWS-E/ BOX

Technical Specifications

Parameters and characteristics for this part

Specification	VBO130-16NO7

Current - Average Rectified (Io)	122 A
Current - Reverse Leakage @ Vr	300 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	PWS-E
Supplier Device Package	PWS-E
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.65 V
Voltage - Peak Reverse (Max)	1.6 kV

Bipolar Module - Diode PWS-E

Part	Voltage - Peak Reverse (Max)	Technology	Diode Type	Mounting Type	Package / Case	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature [Min]	Operating Temperature [Max]
LITTELFUSE VBO130-16NO7	1.6 kV	Standard	Single Phase	Chassis Mount	PWS-E	122 A	1.65 V	PWS-E	300 µA	-40 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes in various packages made for main rectification in 1 phase bridge configurations.

Technical documentation and resources