Discrete Semiconductor Products

ALD210800PCL

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MOSFETS PREC N-CHAN EPAD CMOS MOSFET ARRAY

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Discrete Semiconductor Products

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MOSFETS PREC N-CHAN EPAD CMOS MOSFET ARRAY

Technical Specifications

Parameters and characteristics for this part

Specification	ALD210800PCL

Configuration	4 N-Channel, Matched Pair
Current - Continuous Drain (Id) @ 25°C	80 mA
Drain to Source Voltage (Vdss)	10.6 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	15 pF
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	16-DIP
Package / Case [x]	0.3 in
Package / Case [x]	7.62 mm
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	25 Ohm
Supplier Device Package	16-PDIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	20 mV

Part	FET Feature	Technology	Configuration	Package / Case [x]	Package / Case	Package / Case [x]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]
Advanced Linear Devices Inc. ALD210800PCL	Logic Level Gate	MOSFET (Metal Oxide)	4 N-Channel Matched Pair	0.3 in	16-DIP	7.62 mm	25 Ohm	20 mV	15 pF	70 °C	0 °C	Through Hole	10.6 V	16-PDIP	80 mA	500 mW

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MOSFETS PREC N-CHAN EPAD CMOS MOSFET ARRAY

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