IMW65R072M1HXKSA1
ActiveCOOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 3–PIN PACKAGE
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IMW65R072M1HXKSA1
ActiveCOOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 3–PIN PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | IMW65R072M1HXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 26 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 744 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 96 W |
| Rds On (Max) @ Id, Vgs | 94 mOhm |
| Supplier Device Package | PG-TO247-3-41 |
| Vgs (Max) [Max] | 23 V |
| Vgs (Max) [Min] | -5 V |
| Vgs(th) (Max) @ Id | 5.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IMW65R072 Series
CoolSiC™ MOSFETtechnology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R072M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both thelowest losses in the applicationand thehighest reliability in operation.This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.
Documents
Technical documentation and resources