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BUK7S1R2-40HJ
Discrete Semiconductor Products

BUK7S1R2-40HJ

Active
Nexperia USA Inc.

N-CHANNEL 40 V, 1.2 MΩ STANDARD LEVEL MOSFET IN LFPAK88

BUK7S1R2-40HJ
Discrete Semiconductor Products

BUK7S1R2-40HJ

Active
Nexperia USA Inc.

N-CHANNEL 40 V, 1.2 MΩ STANDARD LEVEL MOSFET IN LFPAK88

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK7S1R2-40HJ
Current - Continuous Drain (Id) @ 25°C300 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs112 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds8420 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1235
Power Dissipation (Max)294 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.2 mOhm
Supplier Device PackageLFPAK88 (SOT1235)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]20 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 4534$ 5.80

Description

General part information

BUK7S1R2-40H Series

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.