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IRF6646TRPBF
Discrete Semiconductor Products

IRF6646TRPBF

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INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 9.5 MOHM;

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IRF6646TRPBF
Discrete Semiconductor Products

IRF6646TRPBF

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 9.5 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6646TRPBF
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2060 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric MN
Power Dissipation (Max)2.8 W, 89 W
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device PackageDIRECTFET™ MN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.57
1$ 3.57
10$ 2.33
10$ 2.33
100$ 1.63
100$ 1.63
500$ 1.33
500$ 1.33
1000$ 1.23
1000$ 1.23
2000$ 1.20
2000$ 1.20
Digi-Reel® 1$ 3.57
1$ 3.57
10$ 2.33
10$ 2.33
100$ 1.63
100$ 1.63
500$ 1.33
500$ 1.33
1000$ 1.23
1000$ 1.23
2000$ 1.20
2000$ 1.20
N/A 9640$ 2.53
9640$ 2.53
431565$ 1.35
431565$ 1.35
Tape & Reel (TR) 4800$ 1.20
4800$ 1.20

Description

General part information

IRF6646 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources