Discrete Semiconductor Products

SPA17N80C3XKSA1

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POWER MOSFET, N CHANNEL, 800 V, 17 A, 0.25 OHM, TO-220, THROUGH HOLE

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Discrete Semiconductor Products

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POWER MOSFET, N CHANNEL, 800 V, 17 A, 0.25 OHM, TO-220, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	SPA17N80C3XKSA1

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	177 nC
Input Capacitance (Ciss) (Max) @ Vds	2320 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	290 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	FET Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package
INFINEON SPA17N80C3XKSA1	N-Channel	20 V	150 °C	-55 °C	10 V	17 A	2320 pF	MOSFET (Metal Oxide)	800 V	177 nC	TO-220-3 Full Pack	42 W	290 mOhm	Through Hole	3.9 V
INFINEON SPB17N80C3ATMA1	N-Channel	20 V	150 °C	-55 °C	10 V	17 A		MOSFET (Metal Oxide)	800 V	177 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	227 W	290 mOhm	Surface Mount	3.9 V	2300 pF	PG-TO263-3-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The SPA17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is suitable for solar, PC Power and adapter applications.

Technical documentation and resources