Specification	XPQR8308QB,LXHQ

Current - Continuous Drain (Id) @ 25°C	350 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	305 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	24700 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerBSFN
Power Dissipation (Max)	750 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.83 mOhm
Supplier Device Package	L-TOGL™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

XPQR8308QB Series

12V - 300V MOSFETs, N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Qualification	Grade	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Package / Case	Operating Temperature	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage XPQR8308QB,LXHQ	0.83 mOhm	6 V 10 V	305 nC	N-Channel	AEC-Q101	Automotive	Surface Mount	24700 pF	MOSFET (Metal Oxide)	8-PowerBSFN	175 °C	L-TOGL™	3.5 V	750 W	350 A	20 V	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 5.83

General part information

12V - 300V MOSFETs, N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

Technical documentation and resources