Integrated Circuits (ICs)

IS65WV12816BLL-55BLA3-TR

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SRAM CHIP ASYNC SINGLE 3.3V 2M-BIT 128K X 16 55NS 48-PIN MINI-BGA T/R

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Integrated Circuits (ICs)

Active

SRAM CHIP ASYNC SINGLE 3.3V 2M-BIT 128K X 16 55NS 48-PIN MINI-BGA T/R

Technical Specifications

Parameters and characteristics for this part

Part	Access Time	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Memory Type	Memory Organization [custom]	Write Cycle Time - Word, Page	Package / Case	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Size	Memory Interface	Technology	Supplier Device Package	Memory Format
ISSI, Integrated Silicon Solution Inc IS65WV12816BLL-55TLA3-TR	55 ns	125 °C	-40 °C	Surface Mount	Volatile	128 K	55 ns	44-TSOP (0.400" 10.16mm Width)	2.5 V	3.6 V	2 Gbit	Parallel	SRAM - Asynchronous	44-TSOP II	SRAM
ISSI, Integrated Silicon Solution Inc IS65WV12816BLL-55TA3	55 ns	125 °C	-40 °C	Surface Mount	Volatile	128 K	55 ns	44-TSOP (0.400" 10.16mm Width)	2.5 V	3.6 V	2 Gbit	Parallel	SRAM - Asynchronous	44-TSOP II	SRAM
ISSI, Integrated Silicon Solution Inc IS65WV12816BLL-55BLA3	55 ns	125 °C	-40 °C	Surface Mount	Volatile	128 K	55 ns	48-TFBGA	2.5 V	3.6 V	2 Gbit	Parallel	SRAM - Asynchronous	48-TFBGA (6x8)	SRAM
ISSI, Integrated Silicon Solution Inc IS65WV12816BLL-55TA3-TR	55 ns	125 °C	-40 °C	Surface Mount	Volatile	128 K	55 ns	44-TSOP (0.400" 10.16mm Width)	2.5 V	3.6 V	2 Gbit	Parallel	SRAM - Asynchronous	44-TSOP II	SRAM
ISSI, Integrated Silicon Solution Inc IS65WV12816BLL-55BLA3-TR	55 ns	125 °C	-40 °C	Surface Mount	Volatile	128 K	55 ns	48-TFBGA	2.5 V	3.6 V	2 Gbit	Parallel	SRAM - Asynchronous	48-TFBGA (6x8)	SRAM

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General part information

High-speed access time: 55ns, 70ns

CMOS low power operation36 mW (typical) operating9 µW (typical) CMOS standby

36 mW (typical) operating

Technical documentation and resources

No documents available