Specification	IRF7853TRPBF

Current - Continuous Drain (Id) @ 25°C	8.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.9 V

IRF7853 Series

Part	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Package / Case	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
INFINEON IRF7853TRPBF	Surface Mount	4.9 V	8.3 A	N-Channel	20 V	150 °C	-55 °C	1640 pF	0.154 in	8-SOIC	3.9 mm	10 V	8-SO	100 V	39 nC	MOSFET (Metal Oxide)	2.5 W	18 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly