Discrete Semiconductor Products

SMBT2907AE6327HTSA1

LTB

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 600 MA, 330 MW, SOT-23, SURFACE MOUNT

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Discrete Semiconductor Products

LTB

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 600 MA, 330 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	SMBT2907AE6327HTSA1

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type
INFINEON SMBT2907AE6327HTSA1	150 °C	60 V	PNP	200 MHz	1.6 V	330 mW	100 hFE	SC-59 SOT-23-3 TO-236-3	600 mA	10 nA	PG-SOT23	Surface Mount

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General part information

The SMBT 2907A E6327 is a PNP silicon switching Bipolar Transistor with low collector-emitter saturation voltage.