Discrete Semiconductor Products

SICF0860P-BP

Active

DIODE SIL CARB 650V 8A ITO220AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE SIL CARB 650V 8A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SICF0860P-BP

Capacitance @ Vr, F	30 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	36 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Isolated Tab
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	ITO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]
MCC (Micro Commercial Components) SICF0860P-BP	500 mA	0 ns	175 ░C	-55 °C	30 pF	8 A	ITO-220AC	36 µA	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2 Isolated Tab	1.6 V	650 V
MCC (Micro Commercial Components) SICF0860P-BP	500 mA	0 ns	175 ░C	-55 °C	30 pF	8 A	ITO-220AC	36 µA	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2 Isolated Tab	1.6 V	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Through Hole ITO-220AC

Technical documentation and resources