Discrete Semiconductor Products

SI2429DW-TP

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MOSFET 20V 1.5A/1A SOT363

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Discrete Semiconductor Products

Active

MOSFET 20V 1.5A/1A SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	SI2429DW-TP

Current - Continuous Drain (Id) @ 25°C	1 A, 1.5 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	3 nC
Gate Charge (Qg) (Max) @ Vgs	2.98 nC
Input Capacitance (Ciss) (Max) @ Vds	202 pF, 223 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	450 mW
Rds On (Max) @ Id, Vgs	150 mOhm, 90 mOhm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power - Max [Max]	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Supplier Device Package
MCC (Micro Commercial Components) SI2429DW-TP	202 pF 223 pF	1 A 1.5 A	-55 C	150 °C	1 V	450 mW	20 V	6-TSSOP SC-88 SOT-363	90 mOhm 150 mOhm	3 nC	2.98 nC	MOSFET (Metal Oxide)	Surface Mount	SOT-363
MCC (Micro Commercial Components) SI2429DW-TP	202 pF 223 pF	1 A 1.5 A	-55 C	150 °C	1 V	450 mW	20 V	6-TSSOP SC-88 SOT-363	90 mOhm 150 mOhm	3 nC	2.98 nC	MOSFET (Metal Oxide)	Surface Mount	SOT-363

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General part information

Mosfet Array 20V 1.5A, 1A 450mW Surface Mount SOT-363

Technical documentation and resources