Discrete Semiconductor Products

MSJP08N90A-BP

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N-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MSJP08N90A-BP

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	474 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	113 W
Rds On (Max) @ Id, Vgs	1.62 Ohm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology
MCC (Micro Commercial Components) MSJP08N90A-BP	900 V	150 °C	-55 °C	TO-220AB (H)	4 V	13.6 nC	113 W	474 pF	1.62 Ohm	30 V	10 V	N-Channel	Through Hole	TO-220-3	8 A	MOSFET (Metal Oxide)
MCC (Micro Commercial Components) MSJP08N90A-BP	900 V	150 °C	-55 °C	TO-220AB (H)	4 V	13.6 nC	113 W	474 pF	1.62 Ohm	30 V	10 V	N-Channel	Through Hole	TO-220-3	8 A	MOSFET (Metal Oxide)

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General part information

N-Channel 900 V 8A (Tc) 113W (Tc) Through Hole TO-220AB (H)

Technical documentation and resources