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INFINEON AIKB30N65DH5ATMA1

Discrete Semiconductor Products

RGT30NL65DGTL

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Rohm Semiconductor

5ΜS SHORT-CIRCUIT TOLERANCE, 650V 15A, FRD BUILT-IN, LPDL, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Calculation of Power Dissipation in Switching Circuit +37

INFINEON AIKB30N65DH5ATMA1

Discrete Semiconductor Products

RGT30NL65DGTL

Active

Rohm Semiconductor

5ΜS SHORT-CIRCUIT TOLERANCE, 650V 15A, FRD BUILT-IN, LPDL, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Calculation of Power Dissipation in Switching Circuit +37

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGT30NL65DGTL

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	45 A
Gate Charge	32 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]	133 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	LPDS
Td (on/off) @ 25°C [custom]	64 ns
Td (on/off) @ 25°C [custom]	18 ns
Test Condition	400 V, 15 V, 10 Ohm, 15 A
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.78
Newark	Each (Supplied on Cut Tape)	1	$ 2.80
		10	$ 2.28
		25	$ 1.98
		50	$ 1.83
		100	$ 1.67
		250	$ 1.66
		500	$ 1.39
		1000	$ 1.30

Description

General part information

RGT30NL65D Series

RGT30NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.

Documents

Technical documentation and resources

Technical Data Sheet EN

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

4 Steps for Successful Thermal Designing of Power Devices

Package Dimensions

Package Information

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Compliance of the ELV directive

Environmental Data

Notes for Calculating Power Consumption:Static Operation

Notes for Temperature Measurement Using Forward Voltage of PN Junction

What Is Thermal Design

About Export Administration Regulations (EAR)

Export Information

Precautions When Measuring the Rear of the Package with a Thermocouple

Moisture Sensitivity Level

Package Information

How to Create Symbols for PSpice Models

θ<sub>JA</sub> and Ψ<sub>JT</sub>

PCB Layout Thermal Design Guide

Method for Monitoring Switching Waveform

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Precautions for Thermal Resistance of Insulation Sheet

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Basics of Thermal Resistance and Heat Dissipation

How to Use the Thermal Resistance and Thermal Characteristics Parameters

About Flammability of Materials

Environmental Data

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Measurement Method and Usage of Thermal Resistance RthJC

How to Use LTspice® Models

Schematic Design & Verification

Estimation of switching losses in IGBTs operating with resistive load

Schematic Design & Verification

Anti-Whisker formation

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

What is a Thermal Model? (IGBT)

Part Explanation

Application Note

Judgment Criteria of Thermal Evaluation

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Two-Resistor Model for Thermal Simulation

Types and Features of Transistors

Application Note

RGT30NL65D Series

5µs Short-Circuit Tolerance, 650V 15A, FRD Built-in, LPDL, Field Stop Trench IGBT

Part	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Mounting Type	Test Condition	Current - Collector (Ic) (Max) [Max]	IGBT Type	Package / Case	Current - Collector Pulsed (Icm)	Supplier Device Package	Power - Max [Max]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
Rohm Semiconductor RGT30NL65DGTL	175 °C	-40 °C	55 ns	Surface Mount	10 Ohm 15 V 15 A 400 V	30 A	Trench Field Stop	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	45 A	LPDS	133 W	32 nC	650 V	64 ns	18 ns