Discrete Semiconductor Products

SQS160ELNW-T1_GE3

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AUTOMOTIVE N-CHANNEL 60 V (D-S)

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Discrete Semiconductor Products

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AUTOMOTIVE N-CHANNEL 60 V (D-S)

Technical Specifications

Parameters and characteristics for this part

Specification	SQS160ELNW-T1_GE3

Current - Continuous Drain (Id) @ 25°C	141 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3866 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SLW
Power Dissipation (Max) [Max]	113 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	PowerPAK® 1212-8SLW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Qualification	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Grade	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SQS160ELNW-T1_GE3	4.5 V 10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	AEC-Q101	4.3 mOhm	PowerPAK® 1212-8SLW	PowerPAK® 1212-8SLW	Automotive	20 V	Surface Mount Wettable Flank	3866 pF	2.5 V	141 A	71 nC	N-Channel	60 V	113 W

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General part information

N-Channel 60 V 141A (Tc) 113W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8SLW

Technical documentation and resources