Discrete Semiconductor Products

IRFL4315TRPBF

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MOSFET, N-CH, 150V, 2.6A, SOT-223

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 150V, 2.6A, SOT-223

Technical Specifications

Parameters and characteristics for this part

Specification	IRFL4315TRPBF

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2.8 W
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	FET Type
INFINEON IRFL4315TRPBF	420 pF	2.8 W	SOT-223	150 V	19 nC	Surface Mount	TO-261-4 TO-261AA	150 °C	-55 °C	30 V	10 V	2.6 A	MOSFET (Metal Oxide)	5 V	N-Channel

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