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DocumentsSI9934BDY-T1-GE3 | Datasheet
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DocumentsSI9934BDY-T1-GE3 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SI9934BDY-T1-GE3 |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 4.8 A |
| Drain to Source Voltage (Vdss) | 12 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 20 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power - Max | 1.1 W |
| Rds On (Max) | 35 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
CAD
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Description
General part information
SI9934 Series
Mosfet Array 12V 4.8A 1.1W Surface Mount 8-SOIC
Documents
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