Discrete Semiconductor Products

SI8405DB-T1-E1

Obsolete

MOSFET P-CH 12V 3.6A 4MICROFOOT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 3.6A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8405DB-T1-E1

Current - Continuous Drain (Id) (Ta)	3.6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	21 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	1.47 W
Rds On (Max)	55 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

Part	Vgs(th) (Max)	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Power Dissipation (Max)	FET Type	Vgs (Max)	Rds On (Max)	Package Name	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case
Vishay Dale SI8405DB-T1-E3	950 mV	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	21 nC	1.47 W	P-Channel	8 V	55 mOhm	4-Microfoot	3.6 A	12 V	4.5 V	1.8 V	4-XFBGA CSPBGA
Vishay Dale SI8405DB-T1-E1	950 mV	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	21 nC	1.47 W	P-Channel	8 V	55 mOhm	4-Microfoot	3.6 A	12 V	4.5 V	1.8 V	4-XFBGA CSPBGA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 12 V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available