Discrete Semiconductor Products
PHPT60610NY-QX
ActiveNexperia USA Inc.
60 V, 10 A NPN HIGH POWER BIPOLAR TRANSISTOR
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Discrete Semiconductor Products
PHPT60610NY-QX
ActiveNexperia USA Inc.
60 V, 10 A NPN HIGH POWER BIPOLAR TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | PHPT60610NY-QX |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 240 |
| Frequency - Transition | 140 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | SC-100, SOT-669 |
| Power - Max [Max] | 1.5 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 360 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.35 | |
Description
General part information
PHPT60610NY-Q Series
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
Documents
Technical documentation and resources