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BCW89-QR
Discrete Semiconductor Products

BCW89-QR

Active
Nexperia USA Inc.

60 V, 100 MA PNP GENERAL PURPOSE TRANSISTOR

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BCW89-QR
Discrete Semiconductor Products

BCW89-QR

Active
Nexperia USA Inc.

60 V, 100 MA PNP GENERAL PURPOSE TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBCW89-QR
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition150 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]250 mW
Supplier Device PackageTO-236AB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2989$ 0.22

Description

General part information

BCW89-Q Series

PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.