BUK9M4R3-40HX

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MOSFET N-CH 40V 95A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 95A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M4R3-40HX

Current - Continuous Drain (Id) @ 25°C	95 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Power Dissipation (Max)	90 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	4.3 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-10 V

Part	Technology	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Qualification	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type
Freescale Semiconductor - NXP BUK9M4R3-40HX	MOSFET (Metal Oxide)	16 V	-10 V	10 V	175 °C	4.3 mOhm	90 W	40 V	N-Channel	AEC-Q101	Automotive	95 A	31 nC	LFPAK33	Surface Mount

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