Discrete Semiconductor Products
BUK9Y58-75B,115
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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Discrete Semiconductor Products
BUK9Y58-75B,115
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9Y58-75B,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20.73 A |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1137 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Power Dissipation (Max) | 60.4 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 53 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) @ Id | 2.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 5105 | $ 1.38 | |
Description
General part information
BUK9Y58-75B Series
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Documents
Technical documentation and resources