Discrete Semiconductor Products

VMO550-01F

Obsolete

MOSFET N-CH 100V 590A Y3-DCB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 590A Y3-DCB

Technical Specifications

Parameters and characteristics for this part

Specification	VMO550-01F

Current - Continuous Drain (Id) @ 25°C	590 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2000 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	50000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Y3-DCB
Power Dissipation (Max)	2200 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	Y3-DCB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	6 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
LITTELFUSE VMO550-01F	6 V	10 V	Chassis Mount	590 A	MOSFET (Metal Oxide)	100 V	20 V	Y3-DCB	2000 nC	-40 °C	150 °C	Y3-DCB	2200 W	N-Channel	2.1 mOhm	50000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 325.48

General part information

N-Channel 100 V 590A (Tc) 2200W (Tc) Chassis Mount Y3-DCB

Technical documentation and resources

No documents available