Discrete Semiconductor Products

SI6473DQ-T1-E3

Obsolete

MOSFET P-CH 20V 6.2A 8TSSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 6.2A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6473DQ-T1-E3

Current - Continuous Drain (Id) (Ta)	6.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	70 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Power Dissipation (Max)	1.08 W
Rds On (Max)	12.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	450 mV

Part	Package Name	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Mounting Type	Package Length	Package Width	Gate Charge (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Technology
Vishay Dale SI6473DQ-T1-E3	8-TSSOP	P-Channel	20 V	1.08 W	-55 °C	150 °C	12.5 mOhm	Surface Mount	0.173 in	4.4 mm	70 nC	8 V	4.5 V	1.8 V	450 mV	6.2 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.74	30d+

3D models and CAD resources for this part

General part information

P-Channel 20 V 6.2A (Ta) 1.08W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available