Discrete Semiconductor Products

PH4025L,115

Obsolete

MOSFET N-CH 25V 99A LFPAK56

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 99A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH4025L,115

Current - Continuous Drain (Id) (Tc)	99 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	21.3 nC
Input Capacitance (Ciss) (Max)	2601 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	46.4 W
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.15 V

Part	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Rds On (Max)	FET Type	Package / Case	Vgs (Max)
NXP USA Inc. PH4025L,115	Surface Mount	46.4 W	25 V	MOSFET (Metal Oxide)	2601 pF	10 V	4.5 V	LFPAK56 Power-SO8	99 A	2.15 V	-55 °C	150 °C	21.3 nC	4 mOhm	N-Channel	SC-100 SOT-669	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.72	1m+

3D models and CAD resources for this part

General part information

N-Channel 25 V 99A (Tc) 46.4W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources